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Mizobata, Hidetoshi*; Tomigahara, Kazuki*; Nozaki, Mikito*; Kobayashi, Takuma*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*
Applied Physics Letters, 121(6), p.062104_1 - 062104_6, 2022/08
Times Cited Count:1 Percentile:17.38(Physics, Applied)The interface properties and energy band alignment of SiO/GaN metal-oxide-semiconductor (MOS) structures fabricated on N-polar GaN(000) substrates were investigated by electrical measurements and synchrotron-radiation X-ray photoelectron spectroscopy. They were then compared with those of SiO/GaN MOS structures on Ga-polar GaN(0001). Although the SiO/GaN(000) structure was found to be more thermally unstable than that on the GaN(0001) substrate, excellent electrical properties were obtained for the SiO/GaN(000) structure by optimizing conditions for post-deposition annealing. However, the conduction band offset for SiO/GaN(000) was smaller than that for SiO/GaN(0001), leading to increased gate leakage current. Therefore, caution is needed when using N-polar GaN(000) substrates for MOS device fabrication.
Nozaki, Mikito*; Terashima, Daiki*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*
Japanese Journal of Applied Physics, 59(SM), p.SMMA07_1 - SMMA07_7, 2020/07
Times Cited Count:2 Percentile:12.5(Physics, Applied)AlGaN/GaN metal-oxide-semiconductor (MOS) structures were fabricated by low-power inductively coupled plasma reactive ion etching and chemical vapor deposition of SiO dielectrics on the etched surfaces, and they were systematically investigated by physical and electrical characterizations in an effort to develop a low-damage recessed gate process. The comprehensive research demonstrates the significant advantages of the proposed low-damage recessed gate process for fabricating next-generation AlGaN/GaN MOS-HFET devices.
Takeuchi, Tomoaki; Otsuka, Noriaki; Tsuchiya, Kunihiko; Tanaka, Shigeo*; Ozawa, Osamu*; Komanome, Hirohisa*; Watanabe, Takashi*; Ueno, Shunji*
Nihon Hozen Gakkai Dai-13-Kai Gakujutsu Koenkai Yoshishu, p.391 - 394, 2016/07
no abstracts in English
Hijikata, Yasuto*; Mitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi*; Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; et al.
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.130 - 133, 2015/11
Takeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; et al.
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.134 - 137, 2015/11
Oshima, Takeshi
Hoshasen To Sangyo, (105), p.12 - 18, 2005/03
no abstracts in English
Oshima, Takeshi; Ito, Hisayoshi
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.191 - 194, 2004/10
no abstracts in English
Kuboyama, Satoshi*; Ikeda, Naomi*; Hirao, Toshio; Matsuda, Sumio*
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.165 - 168, 2004/10
no abstracts in English
Hirao, Toshio; Shindo, Hiroyuki*; Kuboyama, Satoshi*; Nagai, Yuki*; Ohira, Hideharu*; Ito, Hisayoshi; Matsuda, Sumio*
JNC TN7200 2001-001, p.66 - 68, 2002/01
no abstracts in English
Ito, Hisayoshi; Oshima, Takeshi
Hyomen Kagaku, 21(12), p.778 - 783, 2000/12
no abstracts in English
Kuboyama, Satoshi*; Suzuki, Takahiro*; Hirao, Toshio; Matsuda, Sumio*
IEEE Transactions on Nuclear Science, 47(6), p.2634 - 2639, 2000/12
Times Cited Count:7 Percentile:46.88(Engineering, Electrical & Electronic)no abstracts in English
Saito, Yuichi; Yokota, Wataru; Okoshi, Kiyonori
KEK Proceedings 99-22, p.1 - 16, 2000/01
no abstracts in English
Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Kojima, Kazutoshi; Okada, Sohei; Nashiyama, Isamu
Materials Science Forum, 338-342, p.1299 - 1302, 2000/00
no abstracts in English
Nakamura, Yoshiteru; Yokota, Wataru; Okumura, Susumu; Fukuda, Mitsuhiro; Nara, Takayuki; Agematsu, Takashi; Ishibori, Ikuo; Arakawa, Kazuo; Hoshika, Keizo*; *
JAERI-M 94-054, 61 Pages, 1994/03
no abstracts in English
Hirao, Toshio; Yoshikawa, Masahito; Morita, Yosuke; *; *
JAERI-M 89-207, 128 Pages, 1989/12
no abstracts in English
; Hayakawa, Naohiro; Kawakami, Waichiro
EIM-86-137, p.77 - 85, 1986/00
no abstracts in English
Nihon Genshiryoku Gakkai-Shi, 6(8), P. 471, 1964/00
no abstracts in English
Yokoseki, Takashi; Abe, Hiroshi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; Hijikata, Yasuto*; Oshima, Takeshi
no journal, ,
no abstracts in English
Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.
no journal, ,
Silicon carbide (SiC) is expected to be applied to Metal-Oxide-Semiconductor (MOS) FETs used in harsh radiation environments to decommission TEPCO Fukushima Daiichi nuclear reactors. To develop radiation resistant SiC MOS FETs, clarification of their radiation response under elevated temperature is required. We measured capacitance-voltage (C-V) characteristics of SiC MOSFETs irradiated with -rays at 423 K in nitrogen atmosphere. The samples were vertical power 4H-SiC MOSFETs with the blocking voltage of 1200 V and the rated current of 20 A with the gate oxide thickness of 45 nm. Typical C-V curve of a SiC MOSFET irradiated even up to 5 kGy was shifted to negative voltage side, suggesting that the positive charges generated in gate oxide by irradiation. While, no significant change in the slope of the curve was observed, indicating that interface traps between the gate oxide and SiC were merely generated. The radiation response of SiC MOS FETs under elevated temperature predominantly depends on the amount of positive charges generated in the gate oxide.
Takeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.
no journal, ,
no abstracts in English